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- W2003148904 abstract "High-quality Ni-doped ZnO thin films of single phase with preferred c-axis growth orientation were formed on Si (100) substrates by pulsed-laser deposition at room temperature. The films exhibited room-temperature ferromagnetic behaviors with saturation magnetic moment per Ni atom of 0.37μB,0.26μB,0.25μB and 0.21μB for the Ni concentration of 1, 3, 5, and 7 at. %, respectively. The decrease of ferromagnetism with doping concentration demonstrates that ferromagnetism observed at room temperature is an intrinsic property of Ni–ZnO thin films, not from any secondary phase." @default.
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- W2003148904 date "2006-02-06" @default.
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- W2003148904 title "Doping concentration dependence of room-temperature ferromagnetism for Ni-doped ZnO thin films prepared by pulsed-laser deposition" @default.
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