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- W2003149660 abstract "Abstract Significant oscillatory doping density inhomogeneities - striations - are reportedly a commonplace phenomenon in germanium and silicon crystals. Schottky barrier tunneling data on heavily doped and irradiation compensated silicon are presented which are consistent with the presence of such striations. The need for considering striations in studies of the metal-nonmetal transition is emphasized." @default.
- W2003149660 created "2016-06-24" @default.
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- W2003149660 date "1979-01-01" @default.
- W2003149660 modified "2023-09-26" @default.
- W2003149660 title "Doping density striation effects in studies of the metal-nonmetal transition in heavily doped semiconductors" @default.
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- W2003149660 doi "https://doi.org/10.1016/0375-9601(79)90436-5" @default.
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