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- W2003151913 abstract "We have developed a new technique for bonding GaAs on Si susbtrates; called surface modification by chemical treatment. The treatment of selenium sulphide (SeS 2 ) with GaAs produces a reconstructed surface which helps in strong fusion between GaAs and Si at lower temperatures and without weights. The current–voltage ( I – V ) characteristics of both n-GaAs/n-Si and p-GaAs/p-Si were measured at room temperature. The I – V curve did not show a rectifying behaviour when GaAs was bonded to Si with SeS 2 because of the formation of a high-resistance layer at the interface. The characteristics were greatly improved by small additions of Sn to SeS 2 during the bonding process. Sn forms localized islands in addition to the Ga–Se and Se–S, and acts as shunt resistance between GaAs and Si." @default.
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- W2003151913 date "2000-09-01" @default.
- W2003151913 modified "2023-09-26" @default.
- W2003151913 title "Electrical Characteristics of GaAs Bonded to Si Using SeS<sub>2</sub> Technique" @default.
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- W2003151913 doi "https://doi.org/10.1143/jjap.39.l911" @default.
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