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- W2003154181 abstract "In this paper, the low-frequency excess noise due to the kink effect in deep submicron unibond N-metal oxide semiconductor field effect transistor (N-MOSFETs) is investigated. Drain current power spectral density measurements are performed for partially and moderately fully depleted and body-tied devices. The behavior of this effect with the frequency is thoroughly analysed and the control of such a noise overshoot by applying a back-gate voltage is also demonstrated and discussed. A comparison between unibond and SIMOX technologies, in terms of noise behavior, is presented. Finally, the impact of the body contact on the noise is also shown." @default.
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- W2003154181 date "2000-04-01" @default.
- W2003154181 modified "2023-09-26" @default.
- W2003154181 title "Kink-Related Excess Noise in Deep Submicron Partially and Moderately Fully Depleted Unibond N-Metal Oxide Semiconductor Field Effect Transistor (MOSFET)" @default.
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- W2003154181 doi "https://doi.org/10.1143/jjap.39.2261" @default.
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