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• W2003159504 abstract "GaInN and GaN were grown by molecular beam epitaxy on c-plane sapphire using NH3. 9 K photoluminescence performed on both GaInN thin layers and GaInN/GaN multiple-quantum wells (MQWs) exhibits narrow emission (∼50 meV linewidths). Transmission electron microscopy images show sharp GaInN/GaN interfaces and homogeneous GaInN layers. Strong indium surface segregation is also evidenced. Light-emitting diodes were fabricated from 5×GaInN (25 Å)/GaN (35 Å) MQW heterostructures. The 300 K electroluminescence yields blue light at 440 nm." @default.
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• W2003159504 date "1999-06-14" @default.
• W2003159504 modified "2023-09-25" @default.
• W2003159504 title "GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy" @default.
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• W2003159504 doi "https://doi.org/10.1063/1.123199" @default.
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