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- W2003162080 abstract "Various possible rate-controlling processes in the oxidation of HIPped Si3N4 with 4 wt% Y2O3 and without sintering additives have been studied using TGA, XRD, FTIR, SEM and TEM/STEM methods. It is proposed that, in the temperature range 1000 to 1450°C, the oxidation kinetics of the studied Si3N4 materials is mainly determined by O2 diffusivity in the heterogeneous oxide scales and possibly also by the chemical reactivity of Si3N4 materials with O2. It is shown that the effective O2 diffusion coefficient in the glassy oxide scales decreases with an increasing volume of devitrified phases and changes with the structural form of the oxide scales. This may explain why experimental oxidation kinetic curves usually deviate from the conventional parabolic growth law. Die bei der Oxidation von heißisostatisch gepreßtem Si3N4 mit 4 Gew.% Y2O3 bzw. ohne Sinteradditive möglichen diskreten geschwindigkeitsbestimmenden Mechanismen wurden mittels TGA, XRD, FTIR, SEM und TEM/STEM untersucht. Im Temperaturbereich von 1000°C bis 1450°C wird die Oxidationskinetik der untersuchten Si3N4-Materialien hauptsächlich durch die O2-Diffusion in den heterogenen Oxidschichten und wahrscheinlich auch durch die chemische Reaktion von Si3N4 mit O2 bestimmt. Der effektive O2-Diffusionskoeffizient in den glasigen Oxidschichten nimmt mit zunehmendem Anteil an auskristallisierten Phasen ab und ändert sich mit dem Aufbau der Oxidschichten. Dies könnte erklären, warum die experimentall bestimmte Oxidationskinetik im allgemeinen vom konventionellen parabolischen Zeitgesetz abweicht. On a étudié par TGA, XRD, FTIR, SEM et TEM/STEM, les différents mécanismes pouvant contrôler la cinétique d'oxydation du Si3N4 élaboré par pressage isostatique à chaud, additionné de 4% massiques de Y2O3 ou sans adjuvants. On considère que, dans une gamme de températures allant de 1000 à 1450°C, la cinétique d'oxydation des matériaux Si3N4 étudiés est principalement déterminée par la diffusivité de O2 dans les couches hétérogènes d'oxydes et probablement également par la réactivité chimique du Si3N4 avec O2. On montre que le coefficient de diffusion effectif de O2 dans les couches vitreuses d'oxyde diminue avec le volume des phases vitrifiées et change avec la formule des couches d'oxydes. Cela peut expliquer la raison pour laquelle les courbes expérimentales de cinétique d'oxydation s'écartent habituellement de la loi de croissance parabolique classique." @default.
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- W2003162080 date "1991-01-01" @default.
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- W2003162080 title "The rate-controlling processes in the oxidation of HIPped Si3N4 with and without sintering additives" @default.
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- W2003162080 doi "https://doi.org/10.1016/0955-2219(91)90110-l" @default.
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