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• W2003171669 abstract "By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate without the need to transfer graphene layers. In-situ grown MoLGFETs exhibit the expected Dirac point together with the typical low on/off-current ratios. In contrast, BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio up to 1E7. The complete fabrication process is silicon CMOS compatible. This will allow a simple and low-cost integration of graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment." @default.
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• W2003171669 date "2012-04-01" @default.
• W2003171669 modified "2023-10-16" @default.
• W2003171669 title "Silicon-CMOS compatible in-situ CCVD grown graphene transistors with ultra-high on/off-current ratio" @default.
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• W2003171669 doi "https://doi.org/10.1016/j.physe.2011.12.022" @default.
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