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• W2003172597 abstract "Various concentrations of Ge and Se donors were introduced into GaAs crystals by means of neutron transmutation doping. Three kinds of GaAs crystals were used: undoped, Cr-doped crystals, and a high-purity epitaxial layer. Hall coefficient $R$, resistivity $ensuremath{rho}$, and low-field magnetoresistance $frac{ensuremath{Delta}ensuremath{rho}}{ensuremath{rho}}$ were measured between 1.4 and 450 K. Good agreement was found between the measured concentrations of added donors and the values expected from the neutron-capture cross sections and the neutron fluences used. The analysis of the temperature dependence of the carrier concentration of the epitaxial sample gave somewhat smaller values for ${N}_{D}$ and ${N}_{A}$, the concentration of donors and acceptors, than the analysis of the $T$ dependence of ${ensuremath{mu}}_{H}$, but ${N}_{D}ensuremath{-}{N}_{A}$ was the same; this indicates that some deep-lying centers are present in this sample. At low $T$ the magnetic field dependence of $ensuremath{rho}$ of this sample was in good agreement with the theory of impurity conduction modified by Shklovskii. $frac{ensuremath{Delta}ensuremath{rho}}{ensuremath{rho}}$ of this sample was positive to the lowest $T$ (1.4 K) and had two peaks; one at about 50 K corresponds to a maximum of ${ensuremath{mu}}_{H}$ and the second one at about 4.2 K corresponds to the temperature at which band conduction and impurity conduction are of equal magnitude. At low $T$ all the undoped and Cr-doped crystals had a negative magnetoresistance whose magnitude increases with decreasing $T$. At low $T$, $frac{ensuremath{Delta}ensuremath{rho}}{ensuremath{rho}}$ changes from positive to negative as the room-temperature carrier concentration ${n}_{0}$ reaches 2 ifmmodetimeselsetexttimesfi{} ${10}^{15}$ ${mathrm{cm}}^{ensuremath{-}3}$. Above this carrier concentration $frac{ensuremath{Delta}ensuremath{rho}}{ensuremath{rho}}$ is negative and reaches a maximum value at ${n}_{0}ensuremath{simeq}1ifmmodetimeselsetexttimesfi{}{10}^{16}$ ${mathrm{cm}}^{ensuremath{-}3}$. $frac{ensuremath{Delta}ensuremath{rho}}{ensuremath{rho}}$ disappears when ${n}_{0}$ exceeds the concentration of the true metallic state ${n}_{mathrm{cb}}ensuremath{simeq}5ifmmodetimeselsetexttimesfi{}{10}^{17}$ ${mathrm{cm}}^{ensuremath{-}3}$. The closeness of the ${n}_{0}$ value at which the negative $frac{ensuremath{Delta}ensuremath{rho}}{ensuremath{rho}}$ has its maximum value and the critical concentration ${N}_{c}ensuremath{simeq}(3ensuremath{-}4)ifmmodetimeselsetexttimesfi{}{10}^{16}$ ${mathrm{cm}}^{ensuremath{-}3}$ at which the metal-nonmetal transition is observed indicates that these two phenomena are related." @default.
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• W2003172597 date "1982-04-15" @default.
• W2003172597 modified "2023-09-26" @default.
• W2003172597 title "Electrical properties of neutron-transmutation-doped GaAs below 450 K" @default.
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• W2003172597 doi "https://doi.org/10.1103/physrevb.25.5436" @default.
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