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• W2003183128 abstract "Effect of charge-carrier suppression by a high-energy boron-implanted layer has been investigated by ion-induced-current measurement using high-energy proton microprobes. Proton microprobes at 1.3 and 2.0 MeV have been irradiated normal to the n + p diode to generate electron-hole pairs. The collection of charge carriers induced by microprobe irradiation could be reduced by a buried layer formed by boron implantation. It was found that the rate of charge collection depended on the implantation dose but not on the depth of the buried layer." @default.
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• W2003183128 date "1994-12-01" @default.
• W2003183128 modified "2023-09-26" @default.
• W2003183128 title "Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction" @default.
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• W2003183128 doi "https://doi.org/10.1143/jjap.33.7148" @default.
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