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• W2003188896 abstract "Amorphous hydrogenated silicon (a-Si:H) film synthesis in an electron cyclotron resonance (ECR) plasma in silane and/or hydrogen diluted gases is studied in correlation with the local feature of the plasma. Experiments are carried out in a divergent magnetic field configuration at a gas pressure of 4 Pa, and the microwave power input is varied up to 500 W. The highest deposition rate is obtained just near the resonance point and the optical gap of the film has the lowest value at this position. The photoconductivity of the films is found to be strongly dependent on the axial distance L between the substrate and the resonance point. The optimum position for the formation of high-quality a-Si:H films is found in the axial direction, and it varies with input microwave power. The distance L which gives the maximum photoconductivity is shifted with input microwave power. For instance, at a microwave power P µ of about 50 W the highest photoconductivity is obtained at L =6 cm, while at P µ =100 W, the highest value is obtained at L =8 cm. This feature is attributed to the local behavior of the plasma production and decomposition of radical species near the resonance zone." @default.
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• W2003188896 date "1995-01-01" @default.
• W2003188896 modified "2023-09-26" @default.
• W2003188896 title "Influence of Local Feature of Electron Cyclotron Resonance Plasma on the Formation of Amorphous Hydrogenated Silicon Films" @default.
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• W2003188896 doi "https://doi.org/10.1143/jjap.34.285" @default.
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