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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2003191330> ?p ?o ?g. }

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• W2003191330 abstract "Metal-Insulator-Semiconductor Field-Effect-Transistors based on Dihexyl- quaterthiophene (DH4T), has been realized. Unlike conventional MISFET, these devices work through the modulation of an accumulation layer at the semiconductor-insulator interface. An analytical model that describes the operation of organic thin-film-transistors based on a simple trap distribution, with a single shallow trap level located between the valence-band edge and the Fermi level, has been used to determine some microscopic parameters such as the mobility, the density of traps and the corresponding level of traps." @default.
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• W2003191330 date "2001-05-01" @default.
• W2003191330 modified "2023-10-10" @default.
• W2003191330 title "Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene" @default.
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• W2003191330 doi "https://doi.org/10.1051/epjap:2001146" @default.
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