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- W2003201101 abstract "Abstract The selective-area growth of ZnSe is performed by molecular beam epitaxy on oxide-masked GaAs(0 0 1) substrates. Single-crystalline layers are obtained on a bare surface of the GaAs substrate, while poly-crystalline layers are deposited on an SiO 2 -covered region. The growth rate of a single-crystalline layer is faster than that of a poly-crystalline layer at least up to a substrate temperature of 340°C. The difference in growth rate increases with increasing the substrate temperature. The low-temperature photoluminescence of a single-crystalline layer shows dominant excitonic emission." @default.
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- W2003201101 date "2000-06-01" @default.
- W2003201101 modified "2023-09-25" @default.
- W2003201101 title "Selective-area growth of ZnSe on patterned GaAs(001) substrates by molecular beam epitaxy" @default.
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- W2003201101 doi "https://doi.org/10.1016/s0022-0248(00)00082-8" @default.
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