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- W2003202187 abstract "Abstract We report on a clear experimental demonstration of the presence of biexciton recombination in high quality GaN/AlGaN quantum wells, thus opening the way to relevant improvements of the performances of GaN based devices. The samples have been grown by metalorganic vapor phase epitaxy optimizing the deposition conditions to strongly reduce the Al fluctuations in the barriers. This leads to a photoluminescence broadening of only 5 meV at a temperature of 10 K for an Al content in the barriers of 5%. The biexciton binding energy if found to be of the order of 9 meV. The recombination kinetics show that the exciton and biexciton components are not thermalized at low temperature allowing to extract the intrinsic lifetimes of the two components. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2003202187 date "2008-05-01" @default.
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- W2003202187 title "Biexciton recombination in high quality GaN/AlGaN quantum wells" @default.
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- W2003202187 doi "https://doi.org/10.1002/pssc.200778656" @default.
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