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- W2003216775 abstract "We demonstrate 10 Gb/s directly-modulated 1.3 μm InAs quantum-dot (QD) lasers grown on GaAs substrates by molecular beam epitaxy. The active region of the QD lasers consists of five-stacked InAs QD layers. Ridge-waveguide lasers with a ridge width of 4 μm and a cavity length of 600 μm are fabricated with standard lithography and wet etching techniques. It is found that the lasers emit at 1293 nm with a very low threshold current of 5 mA at room temperature. Furthermore, clear eye-opening patterns under 10 Gb/s modulation rate at temperatures of up to 50° C are achieved by the QD lasers. The results presented here have important implications for realizing low-cost, low-power-consumption, and high-speed light sources for next-generation communication systems." @default.
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- W2003216775 date "2010-03-01" @default.
- W2003216775 modified "2023-09-25" @default.
- W2003216775 title "A 10 Gb/s Directly-Modulated 1.3 μm InAs/GaAs Quantum-Dot Laser" @default.
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- W2003216775 doi "https://doi.org/10.1088/0256-307x/27/3/034209" @default.
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