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• W2003236354 abstract "We demonstrate a way to direct carbon nanotube growth using Si nanocrystals that are self-ordered via the thermal decomposition of thin silicon-on-insulator substrates. The Si nanocrystals are about 90nm wide and 100–150nm tall, with 200nm spacing. Nanotubes connect the silicon nanocrystals to form a network. Nanotubes selectively appear between tops of the Si nanocrystals. We show that the flow pattern of the carbon feedstock in the chemical vapor deposition growth process is disturbed by the geometric effect of the Si nanocrystals, providing a mechanism for growth between the tops of the Si nanocrystals." @default.
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• W2003236354 date "2005-06-22" @default.
• W2003236354 modified "2023-10-09" @default.
• W2003236354 title "Template-directed carbon nanotube network using self-organized Si nanocrystals" @default.
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• W2003236354 doi "https://doi.org/10.1063/1.1952585" @default.
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