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• W2003247267 abstract "Scintillation properties of CsI:In single crystals have been investigated. Scintillation yield of CsI:In measured with the 24 μs integration time is around 27,000 ph/MeV, reaching the saturation at 0.005 mol% of the activator. However, luminescence yield of CsI:In is close to CsI:Tl scintillation crystals, which is around 60,000 ph/MeV. This difference is explained by the presence of an ultra-long afterglow in CsI:In scintillation pulse. Thermoluminescence studies revealed a stable trap around 240 K that is supposed to be related to millisecond decay components. The best measured energy resolution of (8.5±0.3)% was achieved at 24 μs peaking time for a CsI sample doped with 0.01 mol% of In. Temperature stability of CsI:In radioluminescence intensity was found to be remarkably high. Its X-ray luminescence yield remains stable up to 600 K, whereafter thermal quenching occurs. The latter property gives CsI:In a potential to be used in well logging applications." @default.
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• W2003247267 date "2014-10-01" @default.
• W2003247267 modified "2023-10-09" @default.
• W2003247267 title "Scintillation properties of CsI:In single crystals" @default.
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• W2003247267 doi "https://doi.org/10.1016/j.nima.2014.05.111" @default.
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