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- W2003261338 abstract "Abstract The crystallographic structure of crater-containing oriented overgrowths on GaAs epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) has been studied by transmission electron microscopy and diffraction. The craters are the visible outward sign of polycrystalline constructions of 6 grains or more having low order twin relations with the matrix. Anisotropic development of the facets of the grains is proposed to be the growth mechanism of the hillock. Stacking fault pyramids are present but their correlation with craters and overgrowths is not systematic." @default.
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- W2003261338 date "1988-03-01" @default.
- W2003261338 modified "2023-10-16" @default.
- W2003261338 title "Oriented overgrowths in MOVPE-grown GaAs" @default.
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- W2003261338 doi "https://doi.org/10.1016/0022-0248(88)90102-9" @default.
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