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• W2003264861 abstract "Abstract CdSiAs 2 single crystals were grown in a closed tube system by chemical vapor transport using bromine or cadmium chloride as a transport agent. Large planar and prismatic elongated crystals were grown within a small temperature gradient (0.5 to 1 K/cm). The crystals were p-type. Crystal doping during the growth could be achieved by employing boron or aluminium as a doping agent. The net carrier density ranged from 4x10 13 to 8x10 17 cm -3 , and the Hall mobility from 100 to 300 cm 2 /V· at room temperature. Photoluminescence spectra showed peaks at 1.600, 1.615, 1.635, 1.789 and 1.855 eV. The lowest band-to-band transition was observed from liquid helium to room temperature. XPS-measurements showed an improved surface stoichiometry of the CdSiAs 2 single crystal surface after removal of a Si-rich oxide layer by dilute HF." @default.
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• W2003264861 date "1989-10-01" @default.
• W2003264861 modified "2023-09-24" @default.
• W2003264861 title "Single crystal growth of p-doped CdSiAs2" @default.
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• W2003264861 doi "https://doi.org/10.1016/0022-0248(89)90568-x" @default.
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