FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2003265796> ?p ?o ?g. }

• W2003265796 endingPage "2530" @default.
• W2003265796 startingPage "2528" @default.
• W2003265796 abstract "We report on the growth technique and electrical properties of epitaxial Si films grown at low temperatures using an electron-cyclotron-resonance plasma deposition technique. We have used standard high vacuum apparatus to grow high quality films at 450–525 °C. A critical step in achieving high quality films is an in situ hydrogen plasma cleaning of the wafer before growth. We have systematically studied the influence of ion bombardment during growth by biasing the substrate, and find that the films are crystalline for substrate bias voltages less negative than about −15 V, but become polycrystalline as the magnitude of the negative bias is increased. The crystallinity of the film was measured using Raman spectroscopy. The undoped films are n type with carrier concentrations in the 1016–1017 cm−3 range. The Hall mobilities measured for the films are comparable to values obtained in bulk Si crystals. We can achieve abrupt profiles in carrier concentrations between the heavy doped substrate and the epilayer, with no evidence of diffusion." @default.
• W2003265796 created "2016-06-24" @default.
• W2003265796 creator A5062510634 @default.
• W2003265796 creator A5073050902 @default.
• W2003265796 creator A5078301579 @default.
• W2003265796 creator A5083160565 @default.
• W2003265796 date "1995-05-08" @default.
• W2003265796 modified "2023-09-30" @default.
• W2003265796 title "Low temperature epitaxial silicon film growth using high vacuum electron-cyclotron-resonance plasma deposition" @default.
• W2003265796 doi "https://doi.org/10.1063/1.113156" @default.
• W2003265796 hasPublicationYear "1995" @default.
• W2003265796 type Work @default.
• W2003265796 sameAs 2003265796 @default.
• W2003265796 citedByCount "50" @default.
• W2003265796 countsByYear W20032657962012 @default.
• W2003265796 countsByYear W20032657962013 @default.
• W2003265796 countsByYear W20032657962015 @default.
• W2003265796 countsByYear W20032657962016 @default.
• W2003265796 countsByYear W20032657962017 @default.
• W2003265796 countsByYear W20032657962018 @default.
• W2003265796 countsByYear W20032657962021 @default.
• W2003265796 countsByYear W20032657962022 @default.
• W2003265796 crossrefType "journal-article" @default.
• W2003265796 hasAuthorship W2003265796A5062510634 @default.
• W2003265796 hasAuthorship W2003265796A5073050902 @default.
• W2003265796 hasAuthorship W2003265796A5078301579 @default.
• W2003265796 hasAuthorship W2003265796A5083160565 @default.
• W2003265796 hasBestOaLocation W20032657962 @default.
• W2003265796 hasConcept C110738630 @default.
• W2003265796 hasConcept C111368507 @default.
• W2003265796 hasConcept C113196181 @default.
• W2003265796 hasConcept C120665830 @default.
• W2003265796 hasConcept C121332964 @default.
• W2003265796 hasConcept C127313418 @default.
• W2003265796 hasConcept C145148216 @default.
• W2003265796 hasConcept C159985019 @default.
• W2003265796 hasConcept C160671074 @default.
• W2003265796 hasConcept C165801399 @default.
• W2003265796 hasConcept C171250308 @default.
• W2003265796 hasConcept C175361016 @default.
• W2003265796 hasConcept C178790620 @default.
• W2003265796 hasConcept C185592680 @default.
• W2003265796 hasConcept C19067145 @default.
• W2003265796 hasConcept C192562407 @default.
• W2003265796 hasConcept C20254490 @default.
• W2003265796 hasConcept C2777289219 @default.
• W2003265796 hasConcept C2779227376 @default.
• W2003265796 hasConcept C2780565262 @default.
• W2003265796 hasConcept C40003534 @default.
• W2003265796 hasConcept C43617362 @default.
• W2003265796 hasConcept C46275449 @default.
• W2003265796 hasConcept C49040817 @default.
• W2003265796 hasConcept C544956773 @default.
• W2003265796 hasConcept C62520636 @default.
• W2003265796 hasConcept C87359718 @default.
• W2003265796 hasConceptScore W2003265796C110738630 @default.
• W2003265796 hasConceptScore W2003265796C111368507 @default.
• W2003265796 hasConceptScore W2003265796C113196181 @default.
• W2003265796 hasConceptScore W2003265796C120665830 @default.
• W2003265796 hasConceptScore W2003265796C121332964 @default.
• W2003265796 hasConceptScore W2003265796C127313418 @default.
• W2003265796 hasConceptScore W2003265796C145148216 @default.
• W2003265796 hasConceptScore W2003265796C159985019 @default.
• W2003265796 hasConceptScore W2003265796C160671074 @default.
• W2003265796 hasConceptScore W2003265796C165801399 @default.
• W2003265796 hasConceptScore W2003265796C171250308 @default.
• W2003265796 hasConceptScore W2003265796C175361016 @default.
• W2003265796 hasConceptScore W2003265796C178790620 @default.
• W2003265796 hasConceptScore W2003265796C185592680 @default.
• W2003265796 hasConceptScore W2003265796C19067145 @default.
• W2003265796 hasConceptScore W2003265796C192562407 @default.
• W2003265796 hasConceptScore W2003265796C20254490 @default.
• W2003265796 hasConceptScore W2003265796C2777289219 @default.
• W2003265796 hasConceptScore W2003265796C2779227376 @default.
• W2003265796 hasConceptScore W2003265796C2780565262 @default.
• W2003265796 hasConceptScore W2003265796C40003534 @default.
• W2003265796 hasConceptScore W2003265796C43617362 @default.
• W2003265796 hasConceptScore W2003265796C46275449 @default.
• W2003265796 hasConceptScore W2003265796C49040817 @default.
• W2003265796 hasConceptScore W2003265796C544956773 @default.
• W2003265796 hasConceptScore W2003265796C62520636 @default.
• W2003265796 hasConceptScore W2003265796C87359718 @default.
• W2003265796 hasIssue "19" @default.
• W2003265796 hasLocation W20032657961 @default.
• W2003265796 hasLocation W20032657962 @default.
• W2003265796 hasLocation W20032657963 @default.
• W2003265796 hasOpenAccess W2003265796 @default.
• W2003265796 hasPrimaryLocation W20032657961 @default.
• W2003265796 hasRelatedWork W1580283484 @default.
• W2003265796 hasRelatedWork W1973993015 @default.
• W2003265796 hasRelatedWork W2005308587 @default.
• W2003265796 hasRelatedWork W2008424349 @default.
• W2003265796 hasRelatedWork W2009964935 @default.
• W2003265796 hasRelatedWork W2013557620 @default.
• W2003265796 hasRelatedWork W2067662551 @default.
• W2003265796 hasRelatedWork W2079270301 @default.
• W2003265796 hasRelatedWork W2150512723 @default.
• W2003265796 hasRelatedWork W2946454824 @default.

• next