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• W2003271630 abstract "Field domain formation in the regime of vertical high-field transport in semiconductor superlattices is studied theoretically. Depending upon the mean doping density ND, either stable stationary domains (for high ND), or self-sustained oscillations of the domains (for intermediate ND) are found. Our simulations show that this behaviour is strongly affected by growth-related imperfections like small fluctuations of the doping density, and that weak disorder on microscopic scales can be quantitatively detected by the global macroscopic current-voltage characteristics. The role of the different realizations of the microscopic disorder and different boundary conditions are discussed. Equal areas rules for domain formation are derived under simplifying approximations." @default.
• W2003271630 created "2016-06-24" @default.
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• W2003271630 date "1996-03-01" @default.
• W2003271630 modified "2023-10-03" @default.
• W2003271630 title "Field domains in semiconductor superlattices" @default.
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• W2003271630 doi "https://doi.org/10.1002/pssb.2221940130" @default.
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