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- W2003285804 abstract "The laser-induced damage of epitaxially grown GaN semiconductor material is investigated for the first time by illumination of the c -plane by sub-picosecond laser pulses at the wavelength of 400 nm. The surface damage was investigated by optical and atomic force microscopies. The threshold fluence for ablation damage is determined to be ∼5.4 J/cm 2 for pulse width of 150 fs. An application is demonstrated for laser-beam processing by the formation of clean dips on the GaN surface to depths of 240 nm in a single shot." @default.
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- W2003285804 date "1999-07-01" @default.
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- W2003285804 title "Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength" @default.
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- W2003285804 doi "https://doi.org/10.1143/jjap.38.l839" @default.
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