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- W2003288258 abstract "ABSTRACT Strained-layer InxGaixAs-GaAs-AIyGaiyAs buried heterostructure (BH) quantum well lasers have been fabricated using three-step selective-area atmospheric pressure metalorganic chemical vapor deposition. Selective-area epitaxy is used to produce BH lasers involving only GaAs on GaAs re- growth, eliminating the detrimental effects associated with exposed AlyGai-yAs found in other fabri-cation methods. Additionally, selective-area epitaxy provides in-plane bandgap energy control to fabri-cate BH devices with different wavelengths on the same wafer.1. INTRODUCTIONBuried heterostructure (BH) lasers have been fabricated by a variety of techniques19. The most common method involves1 growing the entire laser structure, forming an active region mesa by wet or dry etching, and regrowing the burying layer. For strained-layer InGaiAs-GaAs-AlGai..As quan-turn well lasers, this method exposes the easily oxidized AlGai..As optical confining layer, and re-quires the subsequent regrowth of AlGaiAs on AlGai..As. It is desirable to fabricate BH laserswithout exposing AIGaiAs and without initiating regrowth with A1GaiAs. This can be accorn-" @default.
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- W2003288258 date "1994-06-01" @default.
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- W2003288258 title "<title>Advances in quantum well heterostructure lasers: strained-layer buried heterostructure lasers by selective-area epitaxy</title>" @default.
- W2003288258 doi "https://doi.org/10.1117/12.176610" @default.
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