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• W2003296979 abstract "We studied the correlation between the infrared integrated absorption strengths of the wagging, bending and stretching modes for four hydrogenated amorphous silicon (a-Si:H) series, deposited by rf glow discharge. The strength of these modes was varied by changing the deposition temperature while keeping other parameters fixed. For the first time it is shown that a straightforward correlation exists between these three modes. It is argued that the 2100-cm−1 mode is due to SiH2 bonds and that there is no contribution of SiH species on the inner surface of voids. The vibrational spectrum of a-Si:H can be well described by considering the vibrating dipole as a harmonic oscillator with an effective charge e*=0.44 electrons." @default.
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• W2003296979 date "1994-07-11" @default.
• W2003296979 modified "2023-09-24" @default.
• W2003296979 title "Interpretation of the silicon-hydrogen stretching doublet in <i>a</i>-Si:H hydrogenated amorphous silicon" @default.
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• W2003296979 doi "https://doi.org/10.1063/1.112995" @default.
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