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• W2003299341 abstract "In this paper the supercritical carbon dioxide fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide film at . After the treatment of fluid mixed with ethyl alcohol and pure , the oxygen content of film increases and the traps within are terminated by forming Si–O–Si feature bonds. The leakage current density reduces from at an electric field of due to the passivation of traps, and the hysteresis effect in the capacitance–voltage curve is eliminated." @default.
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• W2003299341 date "2009-01-01" @default.
• W2003299341 modified "2023-09-24" @default.
• W2003299341 title "Application of Supercritical CO[sub 2] Fluid for Dielectric Improvement of SiO[sub x] Film" @default.
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• W2003299341 doi "https://doi.org/10.1149/1.3028217" @default.
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