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• W2003302298 endingPage "D146" @default.
• W2003302298 startingPage "D141" @default.
• W2003302298 abstract "The formation of CuIn(1-x)GaxSe2 (CIGS) by electrochemical atomic layer deposition (E-ALD) is reported. Two different CIGS E-ALD cycle programs were investigated. The first consisted of the sequential deposition of alternating atomic layers (AL) metal and Se. That is, AL of Cu, In and Ga were alternated with AL of Se, in what is referred to as a quaternary CIGS program. The second was a superlattice program, composed of differing numbers of the binary compound cycles repeated in a period. The use of the superlattice program allowed better control of the overall stoichiometry. Electron probe microanalysis was used to characterize deposit compositions. A discussion of how variations in the deposition programs affected the resulting deposit compositions is presented. Deposits were formed with the classic CIGS stoichiometry (CuIn0.7Ga0.3Se2) using the superlattice program. XRD patterns for the E-ALD deposited chalcopyrite CIGS are reported as deposited, no annealing." @default.
• W2003302298 created "2016-06-24" @default.
• W2003302298 creator A5028354698 @default.
• W2003302298 creator A5038100254 @default.
• W2003302298 creator A5062604544 @default.
• W2003302298 date "2014-01-01" @default.
• W2003302298 modified "2023-09-27" @default.
• W2003302298 title "Formation of CuIn_(1-x)Ga_xSe₂(CIGS) by Electrochemical Atomic Layer Deposition (ALD)" @default.
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• W2003302298 doi "https://doi.org/10.1149/2.031404jes" @default.
• W2003302298 hasPublicationYear "2014" @default.
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