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• W2003304414 abstract "Crack-free AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on a 200 mm Si substrate by metal–organic chemical vapor deposition (MOCVD) is presented. As grown epitaxial layers show good surface uniformity throughout the wafer. The AlGaN/GaN HEMT with the gate length of 1.5 µm exhibits a high drain current density of 856 mA/mm and a transconductance of 153 mS/mm. The 3.8-µm-thick device demonstrates a high breakdown voltage of 1.1 kV and a low specific on-resistance of 2.3 mΩ cm2 for the gate–drain spacing of 20 µm. The figure of merit of our device is calculated as 5.3×108 V2 Ω-1 cm-2." @default.
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• W2003304414 date "2013-02-01" @default.
• W2003304414 modified "2023-09-23" @default.
• W2003304414 title "Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate" @default.
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• W2003304414 doi "https://doi.org/10.7567/apex.6.026501" @default.
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