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- W2003313555 abstract "Epitaxial n-CdS/p-CdTe heterojunctions have been fabricated by the vacuum evaporation of CdS onto phosphorus doped {⦶111} B CdTe substrates. Analysis of the current-voltage and capacitance-voltage characteristics suggests that electrical transport across the junction is dominated by a multi-step tunneling process. Although open circuit voltage and short circuit current values were high, the overall photovoltaic conversion efficiency of the devices was restricted to ≈ 6%, because of the relatively high resistivity of the CdTe substrates." @default.
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- W2003313555 date "1990-04-01" @default.
- W2003313555 modified "2023-09-26" @default.
- W2003313555 title "Current transport mechanisms in epitaxial CdS/CdTe heterojunctions" @default.
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- W2003313555 doi "https://doi.org/10.1016/0022-0248(90)90957-m" @default.
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