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• W2003373485 abstract "Coalesced, crack-free (0001) AlN films were grown on stripe patterned sapphire substrates without AlN seed layers using hydride vapor phase epitaxy. Using templates with stripes oriented in the ⟨112¯0⟩sapphire direction, lateral epitaxial overgrowth AlN films were coalesced over trench regions as wide as 10 μm despite parasitic sidewall and trench growth. Using transmission electron microscopy, a reduction in the dislocation density from 1.6×109 cm−2 in the seed region to less than 1.0×108 cm−2 in the wing region was demonstrated. Atomic force microscopy and cathodoluminescence measurements were also performed to assess the material quality." @default.
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• W2003373485 date "2009-03-23" @default.
• W2003373485 modified "2023-09-26" @default.
• W2003373485 title "Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy" @default.
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• W2003373485 doi "https://doi.org/10.1063/1.3089253" @default.
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