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• W2003403953 abstract "Electrical and optical properties of semi-insulating GaN films with the lower part of the film doped with Fe were studied. The room-temperature sheet resistivity of the films was found to be 2×1010 Ω/square. The activation energy of the dark conductivity was ∼0.5 eV which corresponds to the depth of the dominant electron traps pinning the Fermi level. The concentration of these traps was highest in the Fe-doped portion of the films and was on the order of 3×1016 cm−3. Photoinduced current transient spectroscopy also showed the presence of a high concentration of deeper electron traps with level at EC−0.9 eV and hole traps at EV+0.9 eV. These layers look very promising as insulating buffers for AlGaN/GaN transistor structures." @default.
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• W2003403953 date "2003-10-20" @default.
• W2003403953 modified "2023-10-16" @default.
• W2003403953 title "Electrical and optical properties of Fe-doped semi-insulating GaN templates" @default.
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• W2003403953 doi "https://doi.org/10.1063/1.1621458" @default.
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