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- W2003407247 abstract "X-ray absorption spectra obtained by total electron yield (TEY) at the Si absorption K-edge have been measured to have chemical and structural information about Si nanocrystals (Si-nc) produced by plasma-enhanced chemical vapour deposition (PECVD). The TEY technique has been employed to investigate the formation of Si-nc and the modification of the silica matrix as a function of annealing temperature (500–1250°C) and of silicon content in the film (35–46at%). The amount of silicon present in the Si-nc has been evaluated by TEY. Thanks to Rutherford backscattering spectrometry measurements, the amount of Si atoms bonded to oxygen and to nitrogen, incorporated by PECVD, has been assessed. A compositional model that interprets the experimental findings is presented." @default.
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- W2003407247 date "2003-03-01" @default.
- W2003407247 modified "2023-10-18" @default.
- W2003407247 title "X-ray absorption study of light emitting silicon nanocrystals" @default.
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- W2003407247 doi "https://doi.org/10.1016/s1386-9477(02)00610-0" @default.
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