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• W2003409498 abstract "The diffusion coefficient of holes in Ge is analyzed as a function of temperature (77⩽T⩽300 K) and electric field (10⩽E⩽104 V/cm). New experiments performed with the time-of-flight technique are presented together with data obtained with the noise-temperature technique, as reported in the literature. The theoretical interpretation makes use of the Monte Carlo procedure in solving the Boltzmann equation and of a band model which accounts for warping and nonparabolic effects of the heavy-hole band. The fact that the theoretical and experimental findings agree satisfactorily suggests that diffusion data may be obtained equally well by either of the two techniques in question (time of flight and noise temperature). Furthermore, warping and nonparabolicity of the hole band are found to be responsible, respectively, for anisotropic effects with the direction of field and for a region of near saturation of the diffusion coefficient at the highest applied fields." @default.
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• W2003409498 date "1978-08-01" @default.
• W2003409498 modified "2023-09-25" @default.
• W2003409498 title "Diffusion coefficient of holes in Ge" @default.
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• W2003409498 doi "https://doi.org/10.1063/1.325501" @default.
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