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• W2003412430 abstract "We present the results of low-temperature photoluminescence experiments performed on GaAs single quantum wells grown by metal organic chemical-vapor deposition. The luminescence line is down shifted by a few milli-electron-volts below the $n=1$ heavy-hole exciton absorption peak. This behavior is interpreted in terms of exciton trapping on interface defects. A simple model provides reasonable values for the exciton binding energy on these defects as well as insights on the lack of thermalization which characterizes the trapped exciton photoluminescence." @default.
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• W2003412430 date "1984-06-15" @default.
• W2003412430 modified "2023-10-18" @default.
• W2003412430 title "Low-temperature exciton trapping on interface defects in semiconductor quantum wells" @default.
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• W2003412430 doi "https://doi.org/10.1103/physrevb.29.7042" @default.
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