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- W2003453152 abstract "High-quality MgO thin films deposited on Si(111) substrates by atomic layer growth (ALG) are formed by a hydrolysis surface reaction of Mg(C2H5)2 and H2O. The growth orientation of MgO changes from (111) to (100), when the temperature of the silicon substrate changes from 600 to 900 °C. The growth orientation difference of MgO grown by ALG is rationalized in terms of the surface diffusion coefficients on MgO." @default.
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- W2003453152 date "1992-09-21" @default.
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- W2003453152 title "Temperature-dependence of the growth orientation of atomic layer growth MgO" @default.
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- W2003453152 doi "https://doi.org/10.1063/1.107514" @default.
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