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- W2003456209 abstract "A new optoelectronic integrated device composed of an Optical Field Effect Transistor (OPFET) in series with a double heterojunction light emitting diode (LED) or a laser liode (LD) which can be used as a Light Amplifying Optical Switch (LAOS), is presented in this paper. We shall call this device as OPFET-LAOS since it is a new one in its category. Theoretical investigation has been carried out to develop the I-V characteristic of the proposed device. It is shown theoretically that the device changes its state form a low current (i.e. high impedance) state to a high current (i.e. low impedance) state through a region of negative differential resistance (NDR) when the applied voltage exceeds a certain limit, called the breakover voltage. Thus, the I-V characteristic of the device is similar to that of an existing LAOS composed of a heterojunction phototransistor (HPT) in series with a double heterojunction LED (or LD)." @default.
- W2003456209 created "2016-06-24" @default.
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- W2003456209 date "2001-10-19" @default.
- W2003456209 modified "2023-09-22" @default.
- W2003456209 title "OPFET-LAOS: a new opto-electronic integrated device for light-amplifying optical switch" @default.
- W2003456209 doi "https://doi.org/10.1117/12.444952" @default.
- W2003456209 hasPublicationYear "2001" @default.
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