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• W2003498982 abstract "Abstract The electronic transitions of ordered Bi monolayers grown at room temperature on n- and p-type doped GaAs(110) were studied by high-resolution electron energy loss spectroscopy. The absorption edge of the semiconducting Bi monolayer was measured and a band gap of 0.65 eV is estimated. A new absorption feature is shown, particularly evident on p-doped GaAs, and its origin can be related to states generated by the dangling and broken bond acceptor-like states located at the regular dislocation arrays in the Bi overlayer." @default.
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• W2003498982 date "1992-01-01" @default.
• W2003498982 modified "2023-09-23" @default.
• W2003498982 title "Bi-induced electronic states at the interface with n- and p-type GaAs(110)" @default.
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• W2003498982 doi "https://doi.org/10.1016/0169-4332(92)90241-o" @default.
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