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- W2003500168 abstract "We have experimentally analyzed the leakage mechanism by comparing the planar DRAM cell and the recently developed DRAM cell transistors that have deeply recessed channels. We have identified important differences in the leakage mechanisms between planar MOSFETs and recessed channel MOSFETs, so we can suggest guidelines with respect to the optimal device structures for the recessed channel DRAM cell." @default.
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- W2003500168 date "2009-09-01" @default.
- W2003500168 modified "2023-10-02" @default.
- W2003500168 title "A comparative study of the DRAM leakage mechanism for planar and recessed channel MOSFETs" @default.
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- W2003500168 doi "https://doi.org/10.1016/j.sse.2009.04.011" @default.
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