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- W2003532910 abstract "Doping of single-crystal silicon in PF5 atmosphere by means of an ArF (193 nm) excimer laser has been investigated as a function of laser fluence, number of pulses, and PF5 gas pressure. We find that phosphorus atoms are only produced by pyrolysis of the PF5 molecules but not by photolysis. The doping experiments were performed in PF5 ambients or using an adsorbed PF5 layer. The results indicate that the incorporation process is external rate limited for doping in PF5 ambients and mainly diffusion limited when using the adsorbed layer. Moreover, the evolution of the incorporated dose with the PF5 pressure shows that at low pressures (<0.5 Torr), the phosphorus atoms are supplied by a chemisorbed PF5 layer formed at the silicon surface, whereas at high pressures the main dopant source appears to be a layer of loosely bound PF5 molecules which has been physisorbed at the surface. It is also found that the surface quality is affected neither by the successive irradiation or by the heavy doping." @default.
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- W2003532910 date "1990-05-15" @default.
- W2003532910 modified "2023-09-26" @default.
- W2003532910 title "Excimer laser induced doping of phosphorus into silicon" @default.
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- W2003532910 doi "https://doi.org/10.1063/1.345186" @default.
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