FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2003645630> ?p ?o ?g. }

• W2003645630 endingPage "5275" @default.
• W2003645630 startingPage "5243" @default.
• W2003645630 abstract "Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward successful integration into the expected processing conditions for future CMOS technologies, especially due to their tendency to form at interfaces with Si (e.g. silicates). These pseudobinary systems also thereby enable the use of other high-κ materials by serving as an interfacial high-κ layer. While work is ongoing, much research is still required, as it is clear that any material which is to replace SiO2 as the gate dielectric faces a formidable challenge. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation." @default.
• W2003645630 created "2016-06-24" @default.
• W2003645630 creator A5067764053 @default.
• W2003645630 creator A5081690749 @default.
• W2003645630 creator A5089310879 @default.
• W2003645630 date "2001-05-15" @default.
• W2003645630 modified "2023-10-17" @default.
• W2003645630 title "High-κ gate dielectrics: Current status and materials properties considerations" @default.
• W2003645630 cites W107348802 @default.
• W2003645630 cites W1487069997 @default.
• W2003645630 cites W1494087470 @default.
• W2003645630 cites W1496024054 @default.
• W2003645630 cites W1500049300 @default.
• W2003645630 cites W1506975141 @default.
• W2003645630 cites W154577535 @default.
• W2003645630 cites W1555753450 @default.
• W2003645630 cites W1602271190 @default.
• W2003645630 cites W1968996538 @default.
• W2003645630 cites W1970200102 @default.
• W2003645630 cites W1971293083 @default.
• W2003645630 cites W1976568552 @default.
• W2003645630 cites W1977727537 @default.
• W2003645630 cites W1978866341 @default.
• W2003645630 cites W1980976383 @default.
• W2003645630 cites W1986636680 @default.
• W2003645630 cites W1987942347 @default.
• W2003645630 cites W1988803969 @default.
• W2003645630 cites W1991103951 @default.
• W2003645630 cites W1991965248 @default.
• W2003645630 cites W1992343392 @default.
• W2003645630 cites W1995093167 @default.
• W2003645630 cites W1995815548 @default.
• W2003645630 cites W1995920390 @default.
• W2003645630 cites W1999160597 @default.
• W2003645630 cites W1999717456 @default.
• W2003645630 cites W2000215139 @default.
• W2003645630 cites W2002904152 @default.
• W2003645630 cites W2008449124 @default.
• W2003645630 cites W2012373184 @default.
• W2003645630 cites W2013493147 @default.
• W2003645630 cites W2015162828 @default.
• W2003645630 cites W2016633152 @default.
• W2003645630 cites W2017694301 @default.
• W2003645630 cites W2019017977 @default.
• W2003645630 cites W2019592005 @default.
• W2003645630 cites W2021239862 @default.
• W2003645630 cites W2022404667 @default.
• W2003645630 cites W2024166218 @default.
• W2003645630 cites W2025099317 @default.
• W2003645630 cites W2025981969 @default.
• W2003645630 cites W2026668005 @default.
• W2003645630 cites W2027514965 @default.
• W2003645630 cites W2027739606 @default.
• W2003645630 cites W2031879257 @default.
• W2003645630 cites W2033346530 @default.
• W2003645630 cites W2035454042 @default.
• W2003645630 cites W2035462859 @default.
• W2003645630 cites W2036057688 @default.
• W2003645630 cites W2038274823 @default.
• W2003645630 cites W2041663197 @default.
• W2003645630 cites W2043118405 @default.
• W2003645630 cites W2043695984 @default.
• W2003645630 cites W2043886850 @default.
• W2003645630 cites W2053322905 @default.
• W2003645630 cites W2054550002 @default.
• W2003645630 cites W2056627518 @default.
• W2003645630 cites W2056905904 @default.
• W2003645630 cites W2059074447 @default.
• W2003645630 cites W2059342964 @default.
• W2003645630 cites W2060700251 @default.
• W2003645630 cites W2062268908 @default.
• W2003645630 cites W2065247666 @default.
• W2003645630 cites W2069325275 @default.
• W2003645630 cites W2072451721 @default.
• W2003645630 cites W2073816687 @default.
• W2003645630 cites W2074059639 @default.
• W2003645630 cites W2076184141 @default.
• W2003645630 cites W2076313449 @default.
• W2003645630 cites W2078224790 @default.
• W2003645630 cites W2078470414 @default.
• W2003645630 cites W2079719052 @default.
• W2003645630 cites W2081009235 @default.
• W2003645630 cites W2081421703 @default.
• W2003645630 cites W2087041232 @default.
• W2003645630 cites W2088138546 @default.
• W2003645630 cites W2094541793 @default.
• W2003645630 cites W2095928799 @default.
• W2003645630 cites W2099335914 @default.
• W2003645630 cites W2101781928 @default.
• W2003645630 cites W2106422551 @default.
• W2003645630 cites W2106766027 @default.
• W2003645630 cites W2113488650 @default.
• W2003645630 cites W2114637423 @default.
• W2003645630 cites W2117114567 @default.
• W2003645630 cites W2118197415 @default.
• W2003645630 cites W2125031919 @default.
• W2003645630 cites W2129753640 @default.
• W2003645630 cites W2131965942 @default.

• next