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- W2003682434 abstract "A semiconductor tunneling infrared laser (STIRL) multiple quantum well device fabricated in GaAs/AlGaAs/InGaAs material is proposed as the emitting element of a two dimensional array for a scene projector. Such sources have a pico-second response time and hence can be modulated at up to 100 GHz rate, which may provide very high dynamic range to produce a sensitive gray scale. The STIRL device utilizes the intra-band emission from the excited state of a quantum well to produce radiation in the 4 - 15 micrometers range. It exploits a novel technique to inject electrons directly into the upper state of a quantum well structure by selective tunneling and allows them to relax to the ground state by emitting an IR photon and subsequently removing electrons from the ground state of the quantum well by another selective tunneling process. The energy difference between the lowest sub-bands in a quantum well of GaAs/AlGaAs can be as high as 0.25 eV which is equivalent to 5 micrometers emission wavelength. The quantum well dimensions can be tailored to produce emission in 5 - 15 micrometers . By selecting InGaAs for the quantum well materials and InAlAs for the barrier materials the emission range can be extended beyond these limits. Individual devices can operate at 100 to 200 mV and at low current resulting in power consumption of less than 15 mW depending on the size of the device. Monolithic integration of these microsources at high densities makes the high definition IR scene projector feasible.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only." @default.
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- W2003682434 date "1995-06-02" @default.
- W2003682434 modified "2023-09-26" @default.
- W2003682434 title "<title>Development of IR semiconductor lasers for scene projector applications</title>" @default.
- W2003682434 doi "https://doi.org/10.1117/12.210581" @default.
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