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- W2003690080 abstract "Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achieved in gain-guided structures at room temperature under pulsed current injection. Devices including the Al0.83In0.17N/Al0.07Ga0.93N bottom cladding exhibit superior device performance. This is a consequence of a better optical mode confinement, as expected from modeling." @default.
- W2003690080 created "2016-06-24" @default.
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- W2003690080 date "2009-05-11" @default.
- W2003690080 modified "2023-10-03" @default.
- W2003690080 title "Al 0.83 In 0.17 N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers" @default.
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- W2003690080 doi "https://doi.org/10.1063/1.3138136" @default.
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