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- W2003706975 abstract "In this work we investigate the effect of the aluminum p-well implant annealing process on the electrical properties of lateral 4H-SiC MOSFET transistors. The interface trap concentration was measured by quasi-static capacitive voltage (QSCV) and negative bias stress measurements on MOSFETs. We found that higher annealing temperatures significantly reduce the trap density in the lower bandgap, and as a consequence the threshold voltage drift of the transistor after negative stress is reduced." @default.
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- W2003706975 date "2013-01-01" @default.
- W2003706975 modified "2023-10-16" @default.
- W2003706975 title "Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi" @default.
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- W2003706975 doi "https://doi.org/10.4028/www.scientific.net/msf.740-742.521" @default.
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