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- W2003709858 abstract "Based on the knowledge previously obtained with regard to the incorporation of phosphorus as an equilibrium-determined process, theoretical values of the enthalpies of the different possible incorporation equilibria are calculated for the incorporation of arsenic into the growing silicon epitaxial layer. The sublimation enthalpies of elemental arsenic, the formation enthalpy of arsine and the enthalpy of solubility enter into the equation. The results compared to the present experimental data of other authors are discussed. Auf der Grundlage früherer Erfahrungen hinsichtlich des Einbaus von Phosphor als eines gleichgewichtsbestimmten Prozesses werden theoretische Enthalpiewerte der verschiedenen möglichen Einbaugleichgewichte berechnet für den Einbau von Arsen in die wachsende Silicium-Epitaxieschicht. Die Sublimationsenthalpien des elementaren Arsen, die Bildungsenthalpie von Arsin und die Löslichkeitsenthalpie gehen in die Gleichung ein. Die Ergebnisse werden anhand der experimentellen Daten anderer Autoren diskutiert." @default.
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- W2003709858 date "1980-01-01" @default.
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- W2003709858 title "Temperature dependence of doping element incorporation with the chemical vapour deposition of epitaxial silicon (V). Incorporation of arsenic" @default.
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- W2003709858 doi "https://doi.org/10.1002/crat.19800150405" @default.
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