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• W2003720603 abstract "Scandium nitride (ScN) is a group IIIB transition metal nitride semiconductor with numerous potential applications in electronic and optoelectronic devices due to close lattice matching with gallium nitride (GaN). However, prior investigations of ScN have focused primarily on heteroepitaxial growth on substrates with a high lattice mismatch of 7%–20%. In this study, the authors have investigated ammonia (NH3) gas source molecular beam epitaxy (NH3-GSMBE) of ScN on more closely lattice matched silicon carbide (SiC) and GaN surfaces (&lt;3% mismatch). Based on a thermodynamic analysis of the ScN phase stability window, NH3-GSMBE conditions of 10−5–10−4 Torr NH3 and 800–1050 °C where selected for initial investigation. In-situ x-ray photoelectron spectroscopy (XPS) and ex-situ Rutherford backscattering measurements showed all ScN films grown using these conditions were stoichiometric. For ScN growth on 3C-SiC (111)-(√3 × √3)R30° carbon rich surfaces, the observed attenuation of the XPS Si 2p and C 1s substrate core levels with increasing ScN thickness indicated growth initiated in a layer-by-layer fashion. This was consistent with scanning electron microscopy (SEM) images of 100–200 nm thick films that revealed featureless surfaces. In contrast, ScN films grown on 3C-SiC (111)-(3 × 3) and 3C-SiC (100)-(3 × 2) silicon rich surfaces were found to exhibit extremely rough surfaces in SEM. ScN films grown on both 3C-SiC (111)-(√3 × √3)R30° and 2H-GaN (0001)-(1 × 1) epilayer surfaces exhibited hexagonal (1 × 1) low energy electron diffraction patterns indicative of (111) oriented ScN. X-ray diffraction ω-2θ rocking curve scans for these same films showed a large full width half maximum of 0.29° (1047 arc sec) consistent with transmission electron microscopy images that revealed the films to be poly-crystalline with columnar grains oriented at ≈15° to the [0001] direction of the 6H-SiC (0001) substrate. In-situ reflection electron energy loss spectroscopy measurements determined the band-gap for the NH3-GSMBE ScN films to be 1.5 ± 0.3 eV, and thermal probe measurements indicated all ScN films to be n-type. The four point probe sheet resistance of the ScN films was observed to increase with decreasing growth temperature and decreased with unintentional oxygen incorporation. Hg probe capacitance–voltage measurements indicated ND-NA decreased with decreasing growth temperature from 1019 to 1020/cm3 for the lowest resistivity films to ≅5 × 1016/cm3 for the highest resistivity films. In-situ ultraviolet photoelectron spectroscopy measurements additionally showed the valence band maximum moving from 1.4 to 0.8 eV below the Fermi level with decreasing growth temperature consistent with the increased resistivity and reduction in carrier concentration. These results suggest that additional reductions in ScN carrier concentrations can be achieved via continued optimization of ScN growth conditions and selection of substrate orientation and surface termination." @default.
• W2003720603 created "2016-06-24" @default.
• W2003720603 creator A5004822979 @default.
• W2003720603 creator A5005575533 @default.
• W2003720603 creator A5011882302 @default.
• W2003720603 date "2014-09-16" @default.
• W2003720603 modified "2023-09-26" @default.
• W2003720603 title "Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces" @default.
• W2003720603 cites W1490241009 @default.
• W2003720603 cites W1557772467 @default.
• W2003720603 cites W1574725983 @default.
• W2003720603 cites W1586651802 @default.
• W2003720603 cites W1615674886 @default.
• W2003720603 cites W1641284127 @default.
• W2003720603 cites W1656610460 @default.
• W2003720603 cites W1658959387 @default.
• W2003720603 cites W1964039437 @default.
• W2003720603 cites W1964706854 @default.
• W2003720603 cites W1965593822 @default.
• W2003720603 cites W1966032345 @default.
• W2003720603 cites W1970366601 @default.
• W2003720603 cites W1970517323 @default.
• W2003720603 cites W1971033625 @default.
• W2003720603 cites W1972105032 @default.
• W2003720603 cites W1974238071 @default.
• W2003720603 cites W1974423278 @default.
• W2003720603 cites W1975033820 @default.
• W2003720603 cites W1977920155 @default.
• W2003720603 cites W1978761246 @default.
• W2003720603 cites W1978992835 @default.
• W2003720603 cites W1980993787 @default.
• W2003720603 cites W1981721694 @default.
• W2003720603 cites W1981794903 @default.
• W2003720603 cites W1982074532 @default.
• W2003720603 cites W1982514477 @default.
• W2003720603 cites W1987416999 @default.
• W2003720603 cites W1987618462 @default.
• W2003720603 cites W1987747992 @default.
• W2003720603 cites W1987887075 @default.
• W2003720603 cites W1988539047 @default.
• W2003720603 cites W1991432297 @default.
• W2003720603 cites W1992057913 @default.
• W2003720603 cites W1992431068 @default.
• W2003720603 cites W1992734260 @default.
• W2003720603 cites W1993102955 @default.
• W2003720603 cites W1993284803 @default.
• W2003720603 cites W2002844499 @default.
• W2003720603 cites W2004306158 @default.
• W2003720603 cites W2006503382 @default.
• W2003720603 cites W2007616426 @default.
• W2003720603 cites W2008148574 @default.
• W2003720603 cites W2008853304 @default.
• W2003720603 cites W2009995672 @default.
• W2003720603 cites W2012009749 @default.
• W2003720603 cites W2012950360 @default.
• W2003720603 cites W2017781421 @default.
• W2003720603 cites W2018333973 @default.
• W2003720603 cites W2018708213 @default.
• W2003720603 cites W2020031366 @default.
• W2003720603 cites W2020054082 @default.
• W2003720603 cites W2020151436 @default.
• W2003720603 cites W2020420945 @default.
• W2003720603 cites W2020464467 @default.
• W2003720603 cites W2022134646 @default.
• W2003720603 cites W2023819535 @default.
• W2003720603 cites W2024664393 @default.
• W2003720603 cites W2026277968 @default.
• W2003720603 cites W2026387170 @default.
• W2003720603 cites W2027042002 @default.
• W2003720603 cites W2027138547 @default.
• W2003720603 cites W2027446131 @default.
• W2003720603 cites W2027601270 @default.
• W2003720603 cites W2028619361 @default.
• W2003720603 cites W2029195064 @default.
• W2003720603 cites W2031143450 @default.
• W2003720603 cites W2032033123 @default.
• W2003720603 cites W2032726664 @default.
• W2003720603 cites W2032845589 @default.
• W2003720603 cites W2033578097 @default.
• W2003720603 cites W2034364484 @default.
• W2003720603 cites W2034522930 @default.
• W2003720603 cites W2035022262 @default.
• W2003720603 cites W2035042332 @default.
• W2003720603 cites W2037338257 @default.
• W2003720603 cites W2037409890 @default.
• W2003720603 cites W2038656742 @default.
• W2003720603 cites W2040343306 @default.
• W2003720603 cites W2041116130 @default.
• W2003720603 cites W2046066729 @default.
• W2003720603 cites W2047001443 @default.
• W2003720603 cites W2048330012 @default.
• W2003720603 cites W2050147207 @default.
• W2003720603 cites W2050694740 @default.
• W2003720603 cites W2051098155 @default.
• W2003720603 cites W2051995931 @default.
• W2003720603 cites W2053131715 @default.
• W2003720603 cites W2054095480 @default.
• W2003720603 cites W2057234160 @default.
• W2003720603 cites W2059310165 @default.
• W2003720603 cites W2060488154 @default.

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