Matches in SemOpenAlex for { <https://semopenalex.org/work/W2003754032> ?p ?o ?g. }
Showing items 1 to 81 of
81
with 100 items per page.
- W2003754032 endingPage "315" @default.
- W2003754032 startingPage "307" @default.
- W2003754032 abstract "The influence on the ESR centres of oxygen incorporation into evaporated amorphous Si is studied. The main effect is not the reduction of the spin density NS, which can be only reduced of a factor 10 after an intitial contamination, but a strong enhancement of the spin–lattice relaxation time T1, which makes the signal very saturable and apparently weak for usual microwave powers. This T1- rising is correlated with a slight g-factor decrease, and lineshape changes from Lorentzian to Gaussian. This was also observed by others with alternative treatments for reducing the spin density, such the rise of the substrate and annealing temperature or hydrogen incorporation. This initial spin density reduction seems always to imply the passivation of the same kind of defects, accessible to the gases and located at the internal surfaces of porous samples. But many other defects with T1-times in the range 10−5 s at 300 K are not suppressed by this way. L'influence sur les centres RPE de l'incorporation d'oxygéne dans des échantillons de Si amorphe obtenus par évaporation a été étudiée. L'effet le plus important n'est pas la réduction de la densité de spins NS qui est limitée après une contamination initiale à un facteur 10 environ, mais une forte augmentation du temps de relaxation, T1, qui rend le signal très saturable et apparemment faible aux puissances usuelles. Cette augmentation de T1, est accompagnée d'une légère diminution du facteur g, et d'une évolution de la forme de raie de Lorentzienne à Gaussienne comme cela a été observé avec d'autres causes des réduction de spins comme le recuit, l'augmentation de la température de substrat ou l'incorporation d'hydrogène. Cette réduction initiale de spins semble correspondre à la suppression d'un měme type de défauts accessibles aux gaz et liés à la porosité des échantillons purs. Par contre un grand nombre d'autres défauts ayant des T1 de l'ordre de 10−5 s à 300 K ne sont pas supprimés par ce procédé." @default.
- W2003754032 created "2016-06-24" @default.
- W2003754032 creator A5022551732 @default.
- W2003754032 creator A5076675964 @default.
- W2003754032 creator A5091220888 @default.
- W2003754032 date "1979-09-01" @default.
- W2003754032 modified "2023-10-16" @default.
- W2003754032 title "The effect of oxygen on the properties of evaporated amorphous silicon" @default.
- W2003754032 cites W1499960583 @default.
- W2003754032 cites W1596888315 @default.
- W2003754032 cites W1999849855 @default.
- W2003754032 cites W2003613992 @default.
- W2003754032 cites W2008504507 @default.
- W2003754032 cites W2035396550 @default.
- W2003754032 cites W2058801714 @default.
- W2003754032 cites W2060712078 @default.
- W2003754032 cites W2069869918 @default.
- W2003754032 cites W2072513704 @default.
- W2003754032 cites W2078246418 @default.
- W2003754032 cites W2079615842 @default.
- W2003754032 cites W2084774334 @default.
- W2003754032 cites W2090544253 @default.
- W2003754032 cites W2105556780 @default.
- W2003754032 cites W2136134832 @default.
- W2003754032 cites W4247838306 @default.
- W2003754032 doi "https://doi.org/10.1002/pssb.2220950136" @default.
- W2003754032 hasPublicationYear "1979" @default.
- W2003754032 type Work @default.
- W2003754032 sameAs 2003754032 @default.
- W2003754032 citedByCount "14" @default.
- W2003754032 crossrefType "journal-article" @default.
- W2003754032 hasAuthorship W2003754032A5022551732 @default.
- W2003754032 hasAuthorship W2003754032A5076675964 @default.
- W2003754032 hasAuthorship W2003754032A5091220888 @default.
- W2003754032 hasConcept C113196181 @default.
- W2003754032 hasConcept C121332964 @default.
- W2003754032 hasConcept C185592680 @default.
- W2003754032 hasConcept C192562407 @default.
- W2003754032 hasConcept C2776390347 @default.
- W2003754032 hasConcept C2779667780 @default.
- W2003754032 hasConcept C43617362 @default.
- W2003754032 hasConcept C49040817 @default.
- W2003754032 hasConcept C540031477 @default.
- W2003754032 hasConcept C544956773 @default.
- W2003754032 hasConcept C56052488 @default.
- W2003754032 hasConcept C62520636 @default.
- W2003754032 hasConcept C8010536 @default.
- W2003754032 hasConceptScore W2003754032C113196181 @default.
- W2003754032 hasConceptScore W2003754032C121332964 @default.
- W2003754032 hasConceptScore W2003754032C185592680 @default.
- W2003754032 hasConceptScore W2003754032C192562407 @default.
- W2003754032 hasConceptScore W2003754032C2776390347 @default.
- W2003754032 hasConceptScore W2003754032C2779667780 @default.
- W2003754032 hasConceptScore W2003754032C43617362 @default.
- W2003754032 hasConceptScore W2003754032C49040817 @default.
- W2003754032 hasConceptScore W2003754032C540031477 @default.
- W2003754032 hasConceptScore W2003754032C544956773 @default.
- W2003754032 hasConceptScore W2003754032C56052488 @default.
- W2003754032 hasConceptScore W2003754032C62520636 @default.
- W2003754032 hasConceptScore W2003754032C8010536 @default.
- W2003754032 hasIssue "1" @default.
- W2003754032 hasLocation W20037540321 @default.
- W2003754032 hasOpenAccess W2003754032 @default.
- W2003754032 hasPrimaryLocation W20037540321 @default.
- W2003754032 hasRelatedWork W2009819460 @default.
- W2003754032 hasRelatedWork W2013783467 @default.
- W2003754032 hasRelatedWork W2017099024 @default.
- W2003754032 hasRelatedWork W2026948001 @default.
- W2003754032 hasRelatedWork W2061728122 @default.
- W2003754032 hasRelatedWork W2078681631 @default.
- W2003754032 hasRelatedWork W2083321254 @default.
- W2003754032 hasRelatedWork W2089633568 @default.
- W2003754032 hasRelatedWork W2095015337 @default.
- W2003754032 hasRelatedWork W2129859591 @default.
- W2003754032 hasVolume "95" @default.
- W2003754032 isParatext "false" @default.
- W2003754032 isRetracted "false" @default.
- W2003754032 magId "2003754032" @default.
- W2003754032 workType "article" @default.