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- W2003790175 abstract "A simple model has shown that the ratio of carrier transit time to carrier capture time determines the transport properties in multiple quantum well structures. An analysis of carrier transport in the wave picture shows that the transit time is increased by the carrier reflection at the quantum well interface. The carrier reflection thus enhances the hole localization in multiple quantum well structures. Step barrier structures are proposed as antireflection layers to the quantum well interfaces. An optimally designed step barrier structure increases the hole transmittance from 57% to 92% in the lattice-matched InGaAs/InP interface. The transit time per well is also reduced from 0.88 to 0.28 ps, which correspond to the threshold current density of 650 and 430 A/cm2 for a four quantum well laser active layer." @default.
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- W2003790175 date "1995-03-01" @default.
- W2003790175 modified "2023-09-23" @default.
- W2003790175 title "Proposal of step barrier structures to reduce hole localization in multiple quantum well structures" @default.
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- W2003790175 doi "https://doi.org/10.1063/1.358841" @default.
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