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• W2003817244 abstract "A new EPROM named SEPROM, based on a modified SEPOX process, is proposed and evaluated. The SEPROM offers a process compatibility to logic LSI's with higher packing density, since the area of the second gate oxide is equal to that of the first gate oxide. To improve the coupling capacitance ratio, which relates to write and read operations, a thin second gate oxide is required for the SEPROM cell at a risk of degradation in charge retention characteristics. A measured test device, however, shows sufficiently good characteristics both in programming and charge retention, due to the desirable structure of the cell. The SEPROM structure appears to be practical and promising for both EPROM and logic device applications." @default.
• W2003817244 created "2016-06-24" @default.
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• W2003817244 date "1984-10-01" @default.
• W2003817244 modified "2023-09-24" @default.
• W2003817244 title "Characteristics and reliability of the SEPROM cell" @default.
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• W2003817244 doi "https://doi.org/10.1109/t-ed.1984.21726" @default.
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