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- W2003853524 abstract "Abstract Epitaxial Bi 2 Sr 2 CuO x films oriented with the c -axis normal to the substrate surface were fabricated on MgO (100) single crystal substrates by using a reactive evaporation method. An in-situ reflection high energy electron diffraction observation has revealed that the strain of a Bi 2 Sr 2 CuO x film caused by the lattice mismatch between Bi 2 Sr 2 CuO x and MgO remained until the thickness of the films reaches 250 A. It has also become clear by using vicinally polished MgO (100) substrates that the orientation of the c -axis of the Bi 2 Sr 2 CuO x film was obstructed by the deviation from the (100) plane of the MgO surface until a thickness of 300 A. A Bi 2 Sr 2 CuO x buffer layer with a thickness of 300 A is recommended on an MgO (100) single crystal substrate when fabricating superconducting Bi-Sr-Ca-Cu-O films." @default.
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- W2003853524 date "1991-10-01" @default.
- W2003853524 modified "2023-10-16" @default.
- W2003853524 title "Effects of the lattice mismatch and vicinal polishing on the heteroepitaxial growth of Bi2Sr2CuOx buffer layers on MgO (100) for Bi-Sr-Ca-Cu-O films" @default.
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- W2003853524 doi "https://doi.org/10.1016/0921-4534(91)90467-d" @default.
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