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• W2003915013 abstract "The operating frequency of a microwave plasma system designed for polycrystalline diamond film deposition is lowered from 2450 to 915 MHz to allow for larger diameter substrate processing. The substrate diameter is limited to 80 mm by the size of the cathode heater utilized as susceptor; 76-mm (3-inch) Si(100) wafers have actually been processed. Good-quality diamond films are obtained over the whole substrate surface with a thickness uniformity of ±10%. The plasma of these systems is sustained by an electromagnetic surface wave and adjusted for uniform coverage of the substrate. We compare the characteristics of these discharges at 915 and 2450 MHz and their corresponding diamond films." @default.
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• W2003915013 date "1998-12-01" @default.
• W2003915013 modified "2023-10-05" @default.
• W2003915013 title "Characterization of diamond films deposited with a 915-MHz scaled-up surface-wave-sustained plasma" @default.
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• W2003915013 doi "https://doi.org/10.1016/s0925-9635(98)00243-x" @default.
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