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• W2003959625 abstract "Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 105 A cm−2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction." @default.
• W2003959625 created "2016-06-24" @default.
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• W2003959625 date "2010-12-27" @default.
• W2003959625 modified "2023-10-16" @default.
• W2003959625 title "Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device" @default.
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• W2003959625 doi "https://doi.org/10.1063/1.3532095" @default.
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