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- W2003973376 abstract "We have studied the ultrafast optical response of native-oxide terminated Si(001) with pump-probe reflectivity using 800 nm, 28 fs pulses at an excitation density of $(5.5ifmmodepmelsetextpmfi{}0.3)ifmmodetimeselsetexttimesfi{}{10}^{18}{mathrm{cm}}^{ensuremath{-}3}.$ Time-dependent reflectivity changes comprise third-order-response coherent-transient variations arising from anisotropic state filling and linear-response variations arising from excited free carriers, state filling, and lattice heating. A time constant of $32ifmmodepmelsetextpmfi{}5mathrm{fs}$ associated with momentum relaxation is extracted from the coherent-transient variations. The state-filling and free-carrier responses are sensitive to carrier temperature, allowing an electron-phonon energy relaxation time of $260ifmmodepmelsetextpmfi{}30mathrm{fs}$ to be measured. The recovery of the reflectivity signal back towards its initial value is largely governed surface recombination: a surface recombination velocity of $(3ifmmodepmelsetextpmfi{}1)ifmmodetimeselsetexttimesfi{}{10}^{4}mathrm{cm}mathrm{}{mathrm{s}}^{ensuremath{-}1}$ is deduced for native-oxide terminated Si(001)." @default.
- W2003973376 created "2016-06-24" @default.
- W2003973376 creator A5013743998 @default.
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- W2003973376 date "2002-10-29" @default.
- W2003973376 modified "2023-09-30" @default.
- W2003973376 title "Femtosecond pump-probe reflectivity study of silicon carrier dynamics" @default.
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- W2003973376 doi "https://doi.org/10.1103/physrevb.66.165217" @default.
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